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IRF840 N-channel 8A 500V Power MOSFET

IRF840 N-channel 8A 500V Power MOSFET - ICs - Integrated Circuits & Chips - Core Electronics
IRF840 N-channel 8A 500V Power MOSFET - ICs - Integrated Circuits & Chips - Core Electronics
IRF840 N-channel 8A 500V Power MOSFET - ICs - Integrated Circuits & Chips - Core Electronics
IRF840 N-channel 8A 500V Power MOSFET - ICs - Integrated Circuits & Chips - Core Electronics
IRF840 N-channel 8A 500V Power MOSFET - ICs - Integrated Circuits & Chips - Core Electronics
IRF840 N-channel 8A 500V Power MOSFET - ICs - Integrated Circuits & Chips - Core Electronics
IRF840 N-channel 8A 500V Power MOSFET - ICs - Integrated Circuits & Chips - Core Electronics
IRF840 N-channel 8A 500V Power MOSFET - ICs - Integrated Circuits & Chips - Core Electronics
IRF840 N-channel 8A 500V Power MOSFET
This Product is available in Ahmedabad - India Warehouse .
Approx Delivery Time is 2-5 Days.
₹32
10 or more ₹30
50 or more ₹29

(Excluding 18% GST)

 

The IRF840 is an N-Channel Power MOSFET which can switch loads up to 500V. The Mosfet could switch loads that consume up to 8A, it can turn on by providing a gate threshold voltage of 10V across the Gate and Source pin. Since the MOSFET is for switching high current high voltage loads it has a relatively high gate voltage, hence cannot be used directly with an I/O pin of a CPU. If you prefer a mosfet with low gate voltage then try IRF540N or 2N7002 etc.

One considerable disadvantage of the IRF840 Mosfet is its high on-resistance (RDS) value which is about 0.85 ohms. Hence this mosfet cannot be used in applications where high switching efficiency is required. The Mosfet requires a driver circuit to provide 10V to the gate pin of this Mosfet the simplest driver circuit can be build using a transistor. It is relatively cheap and has very low thermal resistance, added to this the mosfet also has good switching speeds and hence can be used in DC-DC converter circuits.

 

Pin Configuration

Pin Number

Pin Name

Description

1

Source

Current flows out through Source (maximum 8A)

2

Gate

Controls the biasing of the MOSFET (Threshold voltage 10V)

3

Drain

Current flows in through Drain

Features:
  • N-Channel Power MOSFET
  • Continuous Drain Current (ID): 8A
  • Gate threshold voltage (VGS-th) is 10V (limit = ±20V)
  • Drain to Source Breakdown Voltage: 500V
  • Drain-Source Resistance (RDS) is 0.85 Ohms
  • Rise time and the fall time is 23nS and 20nS
  • Available in To-220 package

Applications:

  • Switching high power devices
  • Inverter Circuits
  • DC-DC Converters
  • Control speed of motors
  • LED dimmers or flashers
  • High-Speed switching applications

 

Datasheet: Download

 

 

 

Package Content:

1 x IRF840 N-channel 8A 500V Power MOSFET

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